MMIC Devices

Our MMIC (Monolithic microwave integrated circuit) devices offering includes ultra-wide band (UWB) power amplifiers (PA), low noise amplifier (LNA), mixers and gain blocks, drive amps, IF ICs, dividers, discrete devices and switches and other RF ICs, available in variety of package sizes or Bare Die to fit your requirements.

 

Our MMIC products offer substantial advantages such as ESD 4,000 volt, MSL 1, high quality and uniformity, enhanced band width 10MHz to 65GHz, 100% lead-free green products (RoHS compliant), higher performance, temperature compensated bias circuit, friendly packaging, MTBF over 100 years and more.

 

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Smart Front End RFIC

A compact, highly integrated front-end RFIC (Radio Frequency Integrated Circuit) intended for range extension of Bluetooth® Smart, 802.15.4 ZigBee™/ Thread, ANT+, and proprietary ISM wireless systems in the 863-870MHz / 902-928MHz or 2.4GHz band.


From Basic PA with integrated with filter networks plus input /output matching circuitry to Single-Chip that combines: Power Amplifier, Low Noise Amplifier, Bypass,  Transmit /  Receive  Switch, 4-Port Antenna Switch,  Directional  Power  Detector and Matching Network.

Wideband Low Noise Amplifier

High performance LNA based on GaAs pHEMT and packaged in a RoHS-compliant SMT packages. Ideal for applications demanding low noise, high linearity and high OIP3 at wideband frequencies. Optimized for extreme efficiency, benefits the system size, overall performance and lower your cost.

All devices are 100% RF/DC tested and most are classified as HBM ESDS Class 1B.

  • BW : 5 – 4000 Mhz
  • P1 : 16.5 – 22 dBm
  • NF : 0.91 – 1.8 dB
  • PKG : SOT-89 , SOT-363

Wide Band Gain Block

High performance InGaP HBT MMIC amplifier, internally matched to 50 Ohms and uses a patented temperature compensation circuit to provide stable current over the operating temperature range. The components are designed for high linearity gain block applications that require excellent gain flatness and over voltage protection without additional external components. Available in a RoHS-compliant SOT-89 SMT package.

  • BW : 5 – 4000 Mhz
  • P1 : 11 – 20 dBm
  • NF : 2.0 – 8.0 dB
  • PKG : SOT-89

High Power Amplifier

High power, high dynamic range amplifiers in a low-cost SMT RoHS-compliant package (SOIC-8), incorporating reliable hetero-junction-bipolar-transistor (HBT) devices fabricated with InGaP GaAs technology.

Ideal for high linearity applications and features high OIP3 and power with low consumption current.  Requires a few external matching components such as a DC blocking capacitor on the in/Output pin, a bypass capacitor and an RF choke for the out port. All devices are 100% RF/DC tested.

  • BW : 500 – 4000 Mhz
  • P1 : 28 – 34 dBm
  • NF : 5.0 – 8.5 dB
  • PKG : SOIC8 , QFN

Dividers

Low Insertion Loss Dividers designed for Cellular & GSM band. Fully passivated with enhanced performance and high reliability. Available in RoHS-compliant SMT packages. Can be used without back side ground soldering.

  • BW : 700 – 2900 Mhz
  • Insertion Loss : 0.3 – 0.7 dBm
  • PKG : SOT-26 , SOIC8

RF Mixers

Our extensive line of RF Mixers covers up to 65 GHz. Optimized to support your requirements for superior isolation, spurious and phase characteristics with overlapping IF and LO bands, and broad flat conversion loss at RF/LO frequencies above 2 GHz.

  • Hybrid Mixers – offer extremely high isolations, flat conversion loss across a broad bandwidth and an extremely compact package
  • High linearity Mixers – ideal choice where intermodulation distortion, P3 or two tones and input power compression are system limitations.  Also available with integrated LO amplifier to provide the highest possible IP3, 1-dB compression and spurious prevention at frequencies below 10 GHz.
  • Balanced Mixers – General purpose mixers for most applications. Variety of bandwidth, isolations, and package options.
  • Special function mixers – IQ Mixers, Image Reject Mixers and Single Sideband Mixers.
BVA303

Digital Variable Gain Amplifier

Digitally controlled variable gain amplifier (DVGA) featuring high linearity, frequency range 5-4000 MHz, internally matched to 50 Ohms as well as a serial output port that enables cascading it with other serial controlled devices.

Offering an integrated high performance digital step attenuator with a high linearity broadband gain block, small package (4x4mm QFN) and operating at VDD 3V voltage. Ideal for 3G/4G wireless infrastructure and other high-performance RF applications.

 

sot-363

3-3.3Vdc Supply Amplifier

Designed to run directly from a 3-3.3V supply and available in high SiGe or InGaP/ GaAs HBT MMIC’s, RoHS-compliant SOT-363 or SOT-89 package. Offering high linearity, internally matched to 50 Ohms and uses a patented temperature compensation circuit to provide stable current over the operating temperature range with no external components.

Ideal for Cellular, PCS, GSM, UMTS, WCDMA, Base station Infrastructure/RFID and Commercial/Industrial/Military wireless system applications

 

Wide Band RF Switch

Wide Band RF Switch

BeRex’s wide band SPDT’s (single pole double throw) RF switches are ideal for high power, high isolation and low loss / fast switching applications.
Supporting a broad array of communication systems from 5MHz to 6GHz including Cellular & GSM, high power WLAN 802.11 a/b/g/n/ac/ax, DOCSIS 3.0/3.1 and more.

BeRex’s switches offer RoHS-compliant package, ESD protection circuits at all pins and high linearity performance over all temperature range (-40 to +105°C).

75Ω HBT Amplifiers

High performance InGaP/GaAs HBT MMIC amplifier family is internally matched to 75 Ohms and uses a patented temperature compensation circuit to provide stable current over operation temperature range without the need for external components.

 

Designed for high linearity gain block applications that require excellent gain flatness over voltage protection without additional external components.  It is ideal for infrastructure projects for 75ohm CATV and satellite applications.

Super Low Noise PHEMT

BCL015-70 is a GaAs Super Low Noise Enhancement Mode pHEMT in surface-mountable package.

 

It’s size recessed gate architecture provides low noise and high associated gain over a broad frequency range of 1000 MHz to 26 GHz .

Main Features :

  • 70 mil. surface-mountable ceramic package
  • 0.46 dB typical noise figure @12 GHz
  • 11.5 dB typical associated gain @12 GHz
  • 0.15 X 150 Micron Recessed Gate
  • RoHS2-compliant/lead-free
  • Single Positive Voltage Operation